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Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology BLS16G4D240FSE.16FBR 16GB
比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Crucial Technology BLS16G4D240FSE.16FBR 16GB
总分
Micron Technology 8ATF2G64HZ-3G2E2 16GB
总分
Crucial Technology BLS16G4D240FSE.16FBR 16GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
更快的读取速度,GB/s
15.6
13.2
测试中的平均数值
更高的内存带宽,mbps
25600
19200
左右 1.33% 更高的带宽
需要考虑的原因
Crucial Technology BLS16G4D240FSE.16FBR 16GB
报告一个错误
低于PassMark测试中的延时,ns
45
51
左右 -13% 更低的延时
更快的写入速度,GB/s
12.2
11.8
测试中的平均数值
规格
完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology BLS16G4D240FSE.16FBR 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
51
45
读取速度,GB/s
15.6
13.2
写入速度,GB/s
11.8
12.2
内存带宽,mbps
25600
19200
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2687
2841
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS16G4D240FSE.16FBR 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Team Group Inc. TEAMGROUP-D4-3733 8GB
Samsung M395T2863QZ4-CF76 1GB
Chun Well Technology Holding Limited CL22-22-22 D4-3200
Samsung M393B1G70BH0-YK0 8GB
Samsung M471A4G43AB1-CWE 32GB
Crucial Technology CT102464BA160B.M16 8GB
SK Hynix HMA41GU6AFR8N-TF 8GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
A-DATA Technology AD5U480016G-B 16GB
Samsung M378B5673EH1-CF8 2GB
Samsung M471A5244BB0-CRC 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Wilk Elektronik S.A. GR2133D464L15/8G 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMW16GX4M1Z3600C18 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905702-012.A00G 8GB
Samsung M393B5170FH0-CH9 4GB
Essencore Limited IMA41GU6MFR8N-CF0 8GB
Samsung M391B5673EH1-CH9 2GB
Kingston 9905702-020.A00G 8GB
Kingston 9905316-106.A02LF 1GB
G Skill Intl F4-4000C19-16GTRS 16GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3600C18-8GTZN 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
A-DATA Technology DDR4 4133 8GB
报告一个错误
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Bug description
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