Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Crucial Technology CT16G4DFRA32A.C8FE 16GB

总分

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

总分

Crucial Technology CT16G4DFRA32A.C8FE 16GB

Crucial Technology CT16G4DFRA32A.C8FE 16GB

差异规格评论

差异

Micron Technology 8ATF2G64HZ-3G2E2 16GB

需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB

报告一个错误

Crucial Technology CT16G4DFRA32A.C8FE 16GB

需要考虑的原因
Crucial Technology CT16G4DFRA32A.C8FE 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 51

左右 -76% 更低的延时
更快的读取速度，GB/s

17.2 15.6

测试中的平均数值
更快的写入速度，GB/s

13.9 11.8

测试中的平均数值

规格

完整的技术规格清单

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Crucial Technology CT16G4DFRA32A.C8FE 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

51 29
读取速度，GB/s

15.6 17.2
写入速度，GB/s

11.8 13.9
内存带宽，mbps

25600 25600

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2687 3503

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Transcend Information JM2666HLE-16G 16GB

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Kingston K1N7HK-ELC 2GB

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AMD R7416G2133U2S 16GB

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Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N

Kingston CBD24D4S7S8ME-8 8GB

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Kingston 99U5702-089.A00G 8GB

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SK Hynix HMT325S6CFR8C-H9 2GB

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Kingston 9905744-023.A00G 16GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Micron Technology 8ATF1G64AZ-2G3B1 8GB

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Elpida EBJ10UE8BAFA-AE-E 1GB

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Crucial Technology CT102464BD160B.M16 8GB

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Kingston 9905678-026.A00G 8GB

Kingston 9905678-026.A00G 8GB