Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Crucial Technology CT8G4DFD8213.C16FHP 8GB

总分

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

总分

Crucial Technology CT8G4DFD8213.C16FHP 8GB

Crucial Technology CT8G4DFD8213.C16FHP 8GB

差异规格评论

差异

Micron Technology 8ATF2G64HZ-3G2E2 16GB

需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB

报告一个错误

更快的读取速度，GB/s

15.6 15.2

测试中的平均数值
更快的写入速度，GB/s

11.8 9.0

测试中的平均数值
更高的内存带宽，mbps

25600 17000

左右 1.51% 更高的带宽

Crucial Technology CT8G4DFD8213.C16FHP 8GB

需要考虑的原因
Crucial Technology CT8G4DFD8213.C16FHP 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 51

左右 -70% 更低的延时

规格

完整的技术规格清单

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Crucial Technology CT8G4DFD8213.C16FHP 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

51 30
读取速度，GB/s

15.6 15.2
写入速度，GB/s

11.8 9.0
内存带宽，mbps

25600 17000

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2687 2355

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5673EH1-CF8 2GB

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Kingston 9905471-002.A00LF 2GB

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ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

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G Skill Intl F4-3733C17-16GTZKK 16GB