RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology CT8G4SFD824A.M16FE1 8GB
比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Crucial Technology CT8G4SFD824A.M16FE1 8GB
总分
Micron Technology 8ATF2G64HZ-3G2E2 16GB
总分
Crucial Technology CT8G4SFD824A.M16FE1 8GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
更高的内存带宽,mbps
25600
19200
左右 1.33% 更高的带宽
需要考虑的原因
Crucial Technology CT8G4SFD824A.M16FE1 8GB
报告一个错误
低于PassMark测试中的延时,ns
30
51
左右 -70% 更低的延时
更快的读取速度,GB/s
16.8
15.6
测试中的平均数值
更快的写入速度,GB/s
13.3
11.8
测试中的平均数值
规格
完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology CT8G4SFD824A.M16FE1 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
51
30
读取速度,GB/s
15.6
16.8
写入速度,GB/s
11.8
13.3
内存带宽,mbps
25600
19200
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2687
2683
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT8G4SFD824A.M16FE1 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SK Hynix HMT41GU7MFR8A-H9 8GB
SK Hynix HMA84GR7AFR4N-VK 32GB
Crucial Technology CT51264BD160B.C16F 4GB
G Skill Intl F4-3200C14-8GVR 8GB
Kingston 99U5584-007.A00LF 4GB
G Skill Intl F4-4000C19-16GTZKK 16GB
Samsung M393B1K70CH0-CH9 8GB
Team Group Inc. TEAMGROUP-SD4-2133 8GB
Kingston 99U5403-036.A00G 4GB
Corsair CMD32GX4M2C3466C16W 16GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Crucial Technology CT16G4DFD8266.M16FH 16GB
A-DATA Technology DDR3 1866 2OZ 4GB
Micron Technology 9ASF1G72AZ-2G3B1 8GB
Samsung M393B1K70CH0-CH9 8GB
V-Color Technology Inc. TN416G24D817-VHA/R 16GB
SK Hynix HMA451U6AFR8N-TF 4GB
Kingston 9905625-076.A00G 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BL8G24C16U4B.8FD 8GB
A-DATA Technology AD73I1C1674EV 4GB
Crucial Technology CT4G4DFS8266.C8FG 4GB
takeMS International AG TMS2GB264D082-805G 2GB
Micron Technology 8ATF1G64AZ-2G1B1 8GB
Mushkin 996902 2GB
Samsung M393A4K40BB0-CPB 32GB
Apacer Technology 78.A1GC6.9H10C 2GB
Crucial Technology BL8G32C16U4WL.M8FE 8GB
报告一个错误
×
Bug description
Source link