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Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-2666C15-8GVS 8GB
比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs G Skill Intl F4-2666C15-8GVS 8GB
总分
Micron Technology 8ATF2G64HZ-3G2E2 16GB
总分
G Skill Intl F4-2666C15-8GVS 8GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
更高的内存带宽,mbps
25600
17000
左右 1.51% 更高的带宽
需要考虑的原因
G Skill Intl F4-2666C15-8GVS 8GB
报告一个错误
低于PassMark测试中的延时,ns
28
51
左右 -82% 更低的延时
更快的读取速度,GB/s
18
15.6
测试中的平均数值
更快的写入速度,GB/s
13.2
11.8
测试中的平均数值
规格
完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-2666C15-8GVS 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
51
28
读取速度,GB/s
15.6
18.0
写入速度,GB/s
11.8
13.2
内存带宽,mbps
25600
17000
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2687
3080
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-2666C15-8GVS 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Mushkin 991586 2GB
Micron Technology 36ASF2G72PZ-2G6E1 16GB
Apacer Technology 78.C1GET.9K10C 8GB
SanMax Technologies Inc. SMD4-U8G48ME-26V 8GB
Samsung M3 78T2863EHS-CF7 1GB
G Skill Intl F4-4500C19-8GTZSWE 8GB
Kingston 99U5429-014.A00LF 4GB
Apacer Technology GD2.1827CS.003 8GB
Kingston 99U5584-004.A00LF 4GB
Corsair CMK16GX4M2D2666C16 8GB
Patriot Memory (PDP Systems) PSD38G16002 8GB
Crucial Technology CT8G4SFRA32A.M4FE 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS8G4D26BFSE.16FBR2 8GB
A-DATA Technology AD73I1C1674EV 4GB
Corsair CMSO16GX4M1A2133C15 16GB
Samsung M471B5273EB0-CK0 4GB
Smart Modular SMS4TDC3C0K0446SCG 4GB
Samsung M378B5773CH0-CH9 2GB
Golden Empire CL16-16-16 D4-3200 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Apacer Technology 78.CAGMR.40C0B 8GB
Samsung M471B1G73QH0-YK0 8GB
Essencore Limited KD48GS88C-32N2200 8GB
SK Hynix HMT325S6CFR8C-PB 2GB
Wilk Elektronik S.A. GR2133D464L15S/8G 8GB
Corsair CML8GX3M2A1866C9 4GB
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB
报告一个错误
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Bug description
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