RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-3600C14-16GTRS 16GB
比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs G Skill Intl F4-3600C14-16GTRS 16GB
总分
Micron Technology 8ATF2G64HZ-3G2E2 16GB
总分
G Skill Intl F4-3600C14-16GTRS 16GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
更高的内存带宽,mbps
25600
17000
左右 1.51% 更高的带宽
需要考虑的原因
G Skill Intl F4-3600C14-16GTRS 16GB
报告一个错误
低于PassMark测试中的延时,ns
23
51
左右 -122% 更低的延时
更快的读取速度,GB/s
23
15.6
测试中的平均数值
更快的写入速度,GB/s
21.1
11.8
测试中的平均数值
规格
完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-3600C14-16GTRS 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
51
23
读取速度,GB/s
15.6
23.0
写入速度,GB/s
11.8
21.1
内存带宽,mbps
25600
17000
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2687
4565
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3600C14-16GTRS 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT51264BD1339.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLT8G4D30BET4K.C8FD 8GB
Crucial Technology CT102464BF160B-16F 8GB
G Skill Intl F4-3600C16-8GTRGC 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSA.8FARG 4GB
Samsung M393B2G70BH0-CH9 16GB
Samsung M471A2K43DB1-CWE 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston 9905598-044.A00G 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLT8G4D30BET4K.C8FD 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT16G4DFD8266.C16FJ 16GB
A-DATA Technology DQVE1908 512MB
Crucial Technology BLT8G4D30BET4K.C8FD 8GB
SK Hynix HYMP512U64CP8-Y5 1GB
Samsung M378A1K43EB2-CWE 8GB
Samsung M393B1G70BH0-CK0 8GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
Samsung M471B5773DH0-CK0 2GB
Samsung M393A1K43BB1-CTD 8GB
SK Hynix HMT451S6BFR8A-PB 4GB
Corsair CMK16GX4M4B3200C16 4GB
takeMS International AG TMS2GB264D083805EV 2GB
G Skill Intl F4-3333C16-4GRRD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMR32GX4M2C3200C16 16GB
报告一个错误
×
Bug description
Source link