Micron Technology 8ATF2G64HZ-3G2E2 16GB vs G Skill Intl F4-3600C17-8GTRS 8GB

总分

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

总分

G Skill Intl F4-3600C17-8GTRS 8GB

G Skill Intl F4-3600C17-8GTRS 8GB

差异规格评论

差异

Micron Technology 8ATF2G64HZ-3G2E2 16GB

需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB

报告一个错误

更高的内存带宽，mbps

25600 17000

左右 1.51% 更高的带宽

G Skill Intl F4-3600C17-8GTRS 8GB

需要考虑的原因
G Skill Intl F4-3600C17-8GTRS 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 51

左右 -132% 更低的延时
更快的读取速度，GB/s

16.9 15.6

测试中的平均数值
更快的写入速度，GB/s

14.4 11.8

测试中的平均数值

规格

完整的技术规格清单

Micron Technology 8ATF2G64HZ-3G2E2 16GB

G Skill Intl F4-3600C17-8GTRS 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

51 22
读取速度，GB/s

15.6 16.9
写入速度，GB/s

11.8 14.4
内存带宽，mbps

25600 17000

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2687 3166

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

G Skill Intl F4-3600C17-8GTRS 8GB

G Skill Intl F4-3600C17-8GTRS 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

V-Color Technology Inc. TL48G30S8KGRGB15 8GB

V-Color Technology Inc. TL48G30S8KGRGB15 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Crucial Technology CT8G4DFS832A.M8FJ 8GB

Crucial Technology CT8G4DFS832A.M8FJ 8GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Kingston MSI26D4S9S8HJ-8 8GB

Kingston MSI26D4S9S8HJ-8 8GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

A-DATA Technology AO1P26KC8T1-BXFSHC 8GB

A-DATA Technology AO1P26KC8T1-BXFSHC 8GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Crucial Technology CT16G4DFD8266.M16FR 16GB

Crucial Technology CT16G4DFD8266.M16FR 16GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Kingston 9965589-035.D00G 16GB

Kingston 9965589-035.D00G 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

G Skill Intl F4-3600C17-8GTRS 8GB

G Skill Intl F4-3600C17-8GTRS 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Patriot Memory (PDP Systems) PSD48G21332 8GB

Patriot Memory (PDP Systems) PSD48G21332 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

A-DATA Technology AM2P24HC8T1-BUSS 8GB

A-DATA Technology AM2P24HC8T1-BUSS 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB

SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB

Kingston HP698651-154-MCN 8GB

Kingston HP698651-154-MCN 8GB

Crucial Technology CT32G4DFD832A.C16FE 32GB

Crucial Technology CT32G4DFD832A.C16FE 32GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

G Skill Intl F4-3600C17-8GTZ 8GB

G Skill Intl F4-3600C17-8GTZ 8GB