Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Kingston HP26D4S9S8HJ-8 8GB

总分

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

总分

Kingston HP26D4S9S8HJ-8 8GB

Kingston HP26D4S9S8HJ-8 8GB

差异规格评论

差异

Micron Technology 8ATF2G64HZ-3G2E2 16GB

需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB

报告一个错误

更快的读取速度，GB/s

15.6 14.7

测试中的平均数值
更快的写入速度，GB/s

11.8 9.4

测试中的平均数值
更高的内存带宽，mbps

25600 21300

左右 1.2% 更高的带宽

Kingston HP26D4S9S8HJ-8 8GB

需要考虑的原因
Kingston HP26D4S9S8HJ-8 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 51

左右 -38% 更低的延时

规格

完整的技术规格清单

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Kingston HP26D4S9S8HJ-8 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

51 37
读取速度，GB/s

15.6 14.7
写入速度，GB/s

11.8 9.4
内存带宽，mbps

25600 21300

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2687 2438

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M471A5143SB1-CRC 4GB

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Corsair CM4X8GE2400C14K4 8GB

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Kingston KVR16N11/8-SP 8GB

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Kingston 99P5474-014.A00LF 4GB

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Samsung M378A2K43CB1-CRC 16GB

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SK Hynix HYMP112U64CP8-S6 1GB

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Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

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Samsung M393B2G70BH0-YK0 16GB

Crucial Technology CT16G4SFD824A.C16FBR 16GB

Crucial Technology CT16G4SFD824A.C16FBR 16GB