Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Kllisre HMA81GU6AFR8N-VK 8GB

总分

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

总分

Kllisre HMA81GU6AFR8N-VK 8GB

Kllisre HMA81GU6AFR8N-VK 8GB

差异规格评论

差异

Micron Technology 8ATF2G64HZ-3G2E2 16GB

需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB

报告一个错误

低于PassMark测试中的延时，ns

51 54

左右 6% 更低的延时
更快的读取速度，GB/s

15.6 10.8

测试中的平均数值
更快的写入速度，GB/s

11.8 8.7

测试中的平均数值
更高的内存带宽，mbps

25600 19200

左右 1.33% 更高的带宽

Kllisre HMA81GU6AFR8N-VK 8GB

需要考虑的原因
Kllisre HMA81GU6AFR8N-VK 8GB

报告一个错误

规格

完整的技术规格清单

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Kllisre HMA81GU6AFR8N-VK 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

51 54
读取速度，GB/s

15.6 10.8
写入速度，GB/s

11.8 8.7
内存带宽，mbps

25600 19200

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2687 2277

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA42GR7AFR4N-TF 16GB

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G Skill Intl F4-3200C15-16GTZR 16GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

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Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Corsair CMK32GX4M4A2400C16 8GB

Corsair CMK32GX4M4A2400C16 8GB