Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Micron Technology 18ASF1G72AZ-2G1A1 8GB

总分

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

总分

Micron Technology 18ASF1G72AZ-2G1A1 8GB

Micron Technology 18ASF1G72AZ-2G1A1 8GB

差异规格评论

差异

Micron Technology 8ATF2G64HZ-3G2E2 16GB

需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB

报告一个错误

更高的内存带宽，mbps

25600 17000

左右 1.51% 更高的带宽

Micron Technology 18ASF1G72AZ-2G1A1 8GB

需要考虑的原因
Micron Technology 18ASF1G72AZ-2G1A1 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 51

左右 -122% 更低的延时
更快的读取速度，GB/s

17.2 15.6

测试中的平均数值
更快的写入速度，GB/s

13.1 11.8

测试中的平均数值

规格

完整的技术规格清单

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 18ASF1G72AZ-2G1A1 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

51 23
读取速度，GB/s

15.6 17.2
写入速度，GB/s

11.8 13.1
内存带宽，mbps

25600 17000

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2687 2989

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB

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SK Hynix HMA81GS6CJR8N-VK 8GB

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Kingston KVR800D2N6/2G 2GB

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Transcend Information TS1GLH64V4H 8GB

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Kingston 99P5474-014.A00LF 4GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M378A1G44AB0-CWE 8GB

Samsung M378A1G44AB0-CWE 8GB

A-DATA Technology DQKD1A08 1GB

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Good Wealth Technology Ltd. KETECH 8GB

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Avant Technology F641GU67F9333G 8GB

Crucial Technology BLS8G4D240FSB.M16FAD 8GB

Crucial Technology BLS8G4D240FSB.M16FAD 8GB