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Micron Technology 8ATF2G64HZ-3G2E2 16GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
总分
Micron Technology 8ATF2G64HZ-3G2E2 16GB
总分
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
低于PassMark测试中的延时,ns
51
54
左右 6% 更低的延时
更快的读取速度,GB/s
15.6
15.2
测试中的平均数值
需要考虑的原因
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
报告一个错误
更快的写入速度,GB/s
14.3
11.8
测试中的平均数值
规格
完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
51
54
读取速度,GB/s
15.6
15.2
写入速度,GB/s
11.8
14.3
内存带宽,mbps
25600
25600
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
2687
2938
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Corsair CMU16GX4M2A2666C16 8GB
Kingston ACR512X64D3S13C9G 4GB
Kingston XJ69DF-MIE 8GB
G Skill Intl F4-3600C16-8GTZKK 8GB
Crucial Technology BLS16G4D26BFSC.16FD 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Kingston 9905712-001.B00G 16GB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-4266C19-8GTZKW 8GB
Team Group Inc. Team-Value-800 2GB
Kingston HP26D4U6S8ME-8X 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3200C16-4GTZB 4GB
报告一个错误
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Bug description
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