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Micron Technology 8ATF2G64HZ-3G2E2 16GB
Patriot Memory (PDP Systems) PSD44G240041 4GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Patriot Memory (PDP Systems) PSD44G240041 4GB

总分
star star star star star
Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

总分
star star star star star
Patriot Memory (PDP Systems) PSD44G240041 4GB

Patriot Memory (PDP Systems) PSD44G240041 4GB

差异 规格 评论

差异

Micron Technology 8ATF2G64HZ-3G2E2 16GB 需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    51 left arrow 68
    左右 25% 更低的延时
  • 更快的写入速度，GB/s
    11.8 left arrow 7.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 19200
    左右 1.33% 更高的带宽
Patriot Memory (PDP Systems) PSD44G240041 4GB 需要考虑的原因
Patriot Memory (PDP Systems) PSD44G240041 4GB
报告一个错误

规格

完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Patriot Memory (PDP Systems) PSD44G240041 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 68
  • 读取速度，GB/s
    15.6 left arrow 15.6
  • 写入速度，GB/s
    11.8 left arrow 7.0
  • 内存带宽，mbps
    25600 left arrow 19200
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2687 left arrow 1792

Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Patriot Memory (PDP Systems) PSD44G240041 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Patriot Memory (PDP Systems) PSD44G240041 4GB
Patriot Memory (PDP Systems) PSD44G240041 4GB
内存RAM
SK Hynix HMT351S6CFR8C-H9 4GB
SK Hynix HMT351S6CFR8C-H9 4GB
SK Hynix HMT351S6BFR8C-H9 4GB
SK Hynix HMT351S6BFR8C-H9 4GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Wilk Elektronik S.A. IRH3200D464L16S/8G 8GB
Wilk Elektronik S.A. IRH3200D464L16S/8G 8GB
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SK Hynix HMT325S6CFR8C-PB 2GB
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SK Hynix HMA41GR7AFR8N-UH 8GB
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G Skill Intl F2-5300CL4-1GBSA 1GB
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Kingston ACR256X64D3S1333C9 2GB
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Samsung M393A2K40CB2-CTD 16GB
内存RAM
Qimonda 64T128020EDL2.5C2 1GB
Qimonda 64T128020EDL2.5C2 1GB
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Apacer Technology GD2.1140CH.001 4GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingston 99U5663-001.A00G 16GB
Kingston 99U5663-001.A00G 16GB
内存RAM
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Kingston KF552C40-16 16GB
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G Skill Intl F4-3200C14-16GTZKO 16GB
内存RAM
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AMD R534G1601U1S-UO 4GB
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Crucial Technology BL4G24C16U4B.8FE 4GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
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Kingston ASU21D4U5S8MB-8 8GB
内存RAM
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Ramaxel Technology RMT3170EB68F9W1600 4GB
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Corsair CMK64GX4M4B3333C16 16GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
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Micron Technology 8ATF1G64AZ-2G6B1 8GB
内存RAM
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Samsung M3 78T5663RZ3-CF7 2GB
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G Skill Intl F4-3200C16-16GIS 16GB
内存RAM