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Micron Technology 8ATF2G64HZ-3G2E2 16GB
V-Color Technology Inc. TL8G36818D-E6PRWWK 8GB
比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs V-Color Technology Inc. TL8G36818D-E6PRWWK 8GB
总分
Micron Technology 8ATF2G64HZ-3G2E2 16GB
总分
V-Color Technology Inc. TL8G36818D-E6PRWWK 8GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
更高的内存带宽,mbps
25600
21300
左右 1.2% 更高的带宽
需要考虑的原因
V-Color Technology Inc. TL8G36818D-E6PRWWK 8GB
报告一个错误
低于PassMark测试中的延时,ns
29
51
左右 -76% 更低的延时
更快的读取速度,GB/s
19.2
15.6
测试中的平均数值
更快的写入速度,GB/s
15.7
11.8
测试中的平均数值
规格
完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
V-Color Technology Inc. TL8G36818D-E6PRWWK 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
51
29
读取速度,GB/s
15.6
19.2
写入速度,GB/s
11.8
15.7
内存带宽,mbps
25600
21300
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2687
3400
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
V-Color Technology Inc. TL8G36818D-E6PRWWK 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB
V-Color Technology Inc. TL8G36818D-E6PRWWK 8GB
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Kingston 99U5474-023.A00LF 4GB
Kllisre 0000 8GB
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Essencore Limited KD4AGU88C-26N190A 16GB
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Samsung M393B5270CH0-CH9 4GB
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SK Hynix HMT325U6CFR8C-PB 2GB
Kingston 99U5663-003.A00G 16GB
Kingston HX318C10FK/4 4GB
Kingston SMD4-S8G48HJ-26V 8GB
报告一个错误
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