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Micron Technology 8ATF51264AZ-2G1B1 4GB
Micron Technology 8G2666CL19 8GB

Micron Technology 8ATF51264AZ-2G1B1 4GB vs Micron Technology 8G2666CL19 8GB

总分
star star star star star
Micron Technology 8ATF51264AZ-2G1B1 4GB

Micron Technology 8ATF51264AZ-2G1B1 4GB

总分
star star star star star
Micron Technology 8G2666CL19 8GB

Micron Technology 8G2666CL19 8GB

差异 规格 评论

差异

Micron Technology 8ATF51264AZ-2G1B1 4GB 需要考虑的原因
Micron Technology 8ATF51264AZ-2G1B1 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 30
    左右 3% 更低的延时
Micron Technology 8G2666CL19 8GB 需要考虑的原因
Micron Technology 8G2666CL19 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.5 left arrow 15.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.3 left arrow 11.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 17000
    左右 1.25 更高的带宽

规格

完整的技术规格清单
Micron Technology 8ATF51264AZ-2G1B1 4GB
Micron Technology 8G2666CL19 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 30
  • 读取速度，GB/s
    15.8 left arrow 16.5
  • 写入速度，GB/s
    11.8 left arrow 13.3
  • 内存带宽，mbps
    17000 left arrow 21300
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2711 left arrow 3040

Micron Technology 8ATF51264AZ-2G1B1 4GB RAM的比较

Samsung M393B2G70BH0-CK0 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology 8G2666CL19 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Samsung M393B1K70CHD-CH9 8GB
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内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
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Crucial Technology CT8G4DFD8213.C16FA11 8GB
内存RAM
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Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-4133C19-8GTZKW 8GB
G Skill Intl F4-4133C19-8GTZKW 8GB
内存RAM
Samsung M471A1G44AB0-CWE 8GB
Samsung M471A1G44AB0-CWE 8GB
Crucial Technology BLS8G4D240FSBK.8FD 8GB
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内存RAM
Corsair CMSX4GX3M1A1600C9 4GB
Corsair CMSX4GX3M1A1600C9 4GB
Wilk Elektronik S.A. IRX3200D464L16SA/8G 8GB
Wilk Elektronik S.A. IRX3200D464L16SA/8G 8GB
内存RAM
Kingston 9965525-155.A00LF 8GB
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Corsair CMD32GX4M4B3600C16 8GB
内存RAM
Kingston KVR533D2N4 512MB
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Corsair CMD32GX4M2C3200C14M 16GB
Corsair CMD32GX4M2C3200C14M 16GB
内存RAM
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Kingston KVR533D2N4 512MB
Micron Technology 16ATF2G64AZ-2G6E1 16GB
Micron Technology 16ATF2G64AZ-2G6E1 16GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
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Chun Well Technology Holding Limited MD4U1636181DCW 16G
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Kingston 9905624-036.A00G 8GB
Kingston 9905624-036.A00G 8GB
内存RAM
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Kingston 9905713-035.A00G 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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Kingston KHX2933C17D4/16G 16GB
内存RAM
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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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Avant Technology W6451U67J7240NB 4GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
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内存RAM