Micron Technology 8JSF25664HZ-1G4D1 2GB vs Crucial Technology BLM16G44C19U4BL.M8FB 16GB

总分

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

总分

Crucial Technology BLM16G44C19U4BL.M8FB 16GB

Crucial Technology BLM16G44C19U4BL.M8FB 16GB

差异规格评论

差异

Micron Technology 8JSF25664HZ-1G4D1 2GB

需要考虑的原因
Micron Technology 8JSF25664HZ-1G4D1 2GB

报告一个错误

Crucial Technology BLM16G44C19U4BL.M8FB 16GB

需要考虑的原因
Crucial Technology BLM16G44C19U4BL.M8FB 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 41

左右 -64% 更低的延时
更快的读取速度，GB/s

18.3 10.7

测试中的平均数值
更快的写入速度，GB/s

16.7 7.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Micron Technology 8JSF25664HZ-1G4D1 2GB

Crucial Technology BLM16G44C19U4BL.M8FB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 25
读取速度，GB/s

10.7 18.3
写入速度，GB/s

7.5 16.7
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1335 3911

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMD32GX4M4C3200C14M 8GB

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Kingston KHX2133C13S4/8G 8GB

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Samsung M3 93T5750CZA-CE6 2GB

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Micron Technology 16ATF2G64AZ-2G1A1 16GB

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A-DATA Technology DQKD1A08 1GB

Samsung M393A2K40CB2-CTD 16GB

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Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Kingston ACR26D4U9S8ME-8 8GB

Kingston ACR26D4U9S8ME-8 8GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Crucial Technology CT8G4SFS8266.C8FE 8GB

Crucial Technology CT8G4SFS8266.C8FE 8GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

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Crucial Technology CT8G4SFD824A.C16FHP 8GB

Kingston 9905469-124.A00LF 4GB

Kingston 9905469-124.A00LF 4GB

Corsair CMV8GX4M1L2400C16 8GB

Corsair CMV8GX4M1L2400C16 8GB