Micron Technology 8JSF25664HZ-1G4D1 2GB vs Transcend Information TS1GSH64V1H 8GB

总分

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

总分

Transcend Information TS1GSH64V1H 8GB

Transcend Information TS1GSH64V1H 8GB

差异规格评论

差异

Micron Technology 8JSF25664HZ-1G4D1 2GB

需要考虑的原因
Micron Technology 8JSF25664HZ-1G4D1 2GB

报告一个错误

Transcend Information TS1GSH64V1H 8GB

需要考虑的原因
Transcend Information TS1GSH64V1H 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 41

左右 -52% 更低的延时
更快的读取速度，GB/s

14.2 10.7

测试中的平均数值
更快的写入速度，GB/s

9.8 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Micron Technology 8JSF25664HZ-1G4D1 2GB

Transcend Information TS1GSH64V1H 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 27
读取速度，GB/s

10.7 14.2
写入速度，GB/s

7.5 9.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1335 2330

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston ACR16D3LS1NGG/2G 2GB

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Corsair CMW32GX4M2D3600C18 16GB

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SK Hynix HMT351S6CFR8C-PB 4GB

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Samsung M3 93T5750CZA-CE6 2GB

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Mushkin MRA4S320GJJM16G 16GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Kingston MSI24D4D4S8MB-8 8GB

Kingston MSI24D4D4S8MB-8 8GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Micron Technology 36ASF2G72PZ-2G3A3 16GB

Micron Technology 36ASF2G72PZ-2G3A3 16GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB

Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

Crucial Technology CT8G4DFS824A.C8FHD1 8GB

Crucial Technology CT8G4DFS824A.C8FHD1 8GB