Micron Technology 8JSF25664HZ-1G4D1 2GB vs Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB

总分

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

总分

Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB

Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB

差异规格评论

差异

Micron Technology 8JSF25664HZ-1G4D1 2GB

需要考虑的原因
Micron Technology 8JSF25664HZ-1G4D1 2GB

报告一个错误

Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB

需要考虑的原因
Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 41

左右 -32% 更低的延时
更快的读取速度，GB/s

17.9 10.7

测试中的平均数值
更快的写入速度，GB/s

14.7 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Micron Technology 8JSF25664HZ-1G4D1 2GB

Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 31
读取速度，GB/s

10.7 17.9
写入速度，GB/s

7.5 14.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1335 3444

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Netac Technology Co Ltd EKBLACK4083016A 8GB

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Kingston 9905403-444.A00LF 4GB

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Micron Technology 8ATF1G64AZ-2G3A1 8GB

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Apacer Technology 78.CAGNT.AR40B 8GB

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SK Hynix HMA451U6AFR8N-TF 4GB

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G Skill Intl F4-4600C18-8GTRS 8GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Apacer Technology 78.CAGPE.AUF0B 8GB

Apacer Technology 78.CAGPE.AUF0B 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

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Ramaxel Technology RMSA3340MB88HBF-3200 16GB

Ramaxel Technology RMSA3340MB88HBF-3200 16GB

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Samsung SF4641G8CKHI6DFSDS 8GB

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