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Mushkin 991586 2GB
Golden Empire CL16-18-18 D4-3200 8GB

Mushkin 991586 2GB vs Golden Empire CL16-18-18 D4-3200 8GB

总分
star star star star star
Mushkin 991586 2GB

Mushkin 991586 2GB

总分
star star star star star
Golden Empire CL16-18-18 D4-3200 8GB

Golden Empire CL16-18-18 D4-3200 8GB

差异 规格 评论

差异

Mushkin 991586 2GB 需要考虑的原因
Mushkin 991586 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 28
    左右 7% 更低的延时
Golden Empire CL16-18-18 D4-3200 8GB 需要考虑的原因
Golden Empire CL16-18-18 D4-3200 8GB
报告一个错误
  • 更快的读取速度，GB/s
    18.2 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.2 left arrow 7.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Mushkin 991586 2GB
Golden Empire CL16-18-18 D4-3200 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 28
  • 读取速度，GB/s
    13.8 left arrow 18.2
  • 写入速度，GB/s
    7.9 left arrow 14.2
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2156 left arrow 3463

Mushkin 991586 2GB RAM的比较

Mushkin 999015 4GB
Samsung M471A1K1KBB1-CRC 8GB

Golden Empire CL16-18-18 D4-3200 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP112U64CP8-S5 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Mushkin 991586 2GB
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Golden Empire CL16-18-18 D4-3200 8GB
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Kingston K821PJ-MID 16GB
内存RAM
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Elpida EBJ21UE8BDF0-DJ-F 2GB
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GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB
内存RAM
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Kingston 9965525-140.A00LF 8GB
AMD R948G2806U2S 8GB
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内存RAM
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Samsung M471A1G43DB0-0-B 8GB
内存RAM