Mushkin 991586 2GB vs SK Hynix HMA42GR7AFR4N-TF 16GB

总分

Mushkin 991586 2GB

Mushkin 991586 2GB

总分

SK Hynix HMA42GR7AFR4N-TF 16GB

SK Hynix HMA42GR7AFR4N-TF 16GB

差异规格评论

差异

Mushkin 991586 2GB

需要考虑的原因
Mushkin 991586 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 50

左右 48% 更低的延时
更快的读取速度，GB/s

13.8 10.6

测试中的平均数值

SK Hynix HMA42GR7AFR4N-TF 16GB

需要考虑的原因
SK Hynix HMA42GR7AFR4N-TF 16GB

报告一个错误

更快的写入速度，GB/s

8.2 7.9

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Mushkin 991586 2GB

SK Hynix HMA42GR7AFR4N-TF 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 50
读取速度，GB/s

13.8 10.6
写入速度，GB/s

7.9 8.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2156 2386

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston X75V1H-MIE 32GB

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Elpida EBJ41UF8BDU5-GN-F 4GB

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Essencore Limited KD48GU88C-26N1600 8GB

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Crucial Technology CT4G4SFS824A.C8FBR2 4GB

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Qimonda 64T128020EDL2.5C2 1GB

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Essencore Limited IM4AGU88N24-FFFHA0 16GB

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AMD AE34G1601U1 4GB

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Kingston 9905734-102.A00G 32GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Samsung M378A5143EB1-CPB 4GB

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Samsung M471B5173EB0-YK0 4GB

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Crucial Technology CT8G4DFS8266.C8FN 8GB

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Samsung M393B1G70BH0-YK0 8GB

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Crucial Technology BLS4G4D240FSE.M8FADM 4GB

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AMD R538G1601U2S 8GB

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Vasekey M378A1K43BB2-CPB 8GB

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PNY Electronics PNY 2GB

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INTENSO 5641152 4GB

INTENSO 5641152 4GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Chun Well Technology Holding Limited MD4U0840180BCW 8GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

G Skill Intl F4-2666C15-4GVK 4GB

G Skill Intl F4-2666C15-4GVK 4GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Avant Technology W641GU67J7240N8 8GB

Avant Technology W641GU67J7240N8 8GB