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Mushkin 991586 2GB
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

Mushkin 991586 2GB vs Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

总分
star star star star star
Mushkin 991586 2GB

Mushkin 991586 2GB

总分
star star star star star
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

差异 规格 评论

差异

Mushkin 991586 2GB 需要考虑的原因
Mushkin 991586 2GB
报告一个错误
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB 需要考虑的原因
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 26
    左右 -13% 更低的延时
  • 更快的读取速度，GB/s
    19.6 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    18.8 left arrow 7.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Mushkin 991586 2GB
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 23
  • 读取速度，GB/s
    13.8 left arrow 19.6
  • 写入速度，GB/s
    7.9 left arrow 18.8
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2156 left arrow 4095

Mushkin 991586 2GB RAM的比较

Mushkin 999015 4GB
Samsung M471A1K1KBB1-CRC 8GB

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3600C19-16GSXKB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM