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Mushkin 991679ES 996679ES 2GB
Corsair CMD8GX4M2B3000C15 4GB

Mushkin 991679ES 996679ES 2GB vs Corsair CMD8GX4M2B3000C15 4GB

总分
star star star star star
Mushkin 991679ES 996679ES 2GB

Mushkin 991679ES 996679ES 2GB

总分
star star star star star
Corsair CMD8GX4M2B3000C15 4GB

Corsair CMD8GX4M2B3000C15 4GB

差异 规格 评论

差异

Mushkin 991679ES 996679ES 2GB 需要考虑的原因
Mushkin 991679ES 996679ES 2GB
报告一个错误
Corsair CMD8GX4M2B3000C15 4GB 需要考虑的原因
Corsair CMD8GX4M2B3000C15 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 63
    左右 -200% 更低的延时
  • 更快的读取速度，GB/s
    18.5 left arrow 7.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.2 left arrow 5.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Mushkin 991679ES 996679ES 2GB
Corsair CMD8GX4M2B3000C15 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    63 left arrow 21
  • 读取速度，GB/s
    7.7 left arrow 18.5
  • 写入速度，GB/s
    5.0 left arrow 14.2
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1130 left arrow 2930

Mushkin 991679ES 996679ES 2GB RAM的比较

Kingston 9905403-084.A01LF 2GB
Corsair CM4X8GF2666C16K8 8GB

Corsair CMD8GX4M2B3000C15 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Mushkin 991679ES 996679ES 2GB
Mushkin 991679ES 996679ES 2GB
Corsair CMD8GX4M2B3000C15 4GB
Corsair CMD8GX4M2B3000C15 4GB
内存RAM
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Kingston 99U5469-045.A00LF 4GB
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Kingston 9905471-002.A00LF 2GB
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内存RAM
Kingston 9905403-156.A00LF 2GB
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Elpida EBJ41UF8BDU5-GN-F 4GB
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内存RAM
Micron Technology 8ATF1G64HZ-3G2R1 8GB
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内存RAM
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Mushkin 99[2/7/4]202F 4GB
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