Mushkin 991679ES 996679ES 2GB vs Corsair CMK16GX4M1A2400C14 16GB

总分

Mushkin 991679ES 996679ES 2GB

Mushkin 991679ES 996679ES 2GB

总分

Corsair CMK16GX4M1A2400C14 16GB

Corsair CMK16GX4M1A2400C14 16GB

差异规格评论

差异

Mushkin 991679ES 996679ES 2GB

需要考虑的原因
Mushkin 991679ES 996679ES 2GB

报告一个错误

Corsair CMK16GX4M1A2400C14 16GB

需要考虑的原因
Corsair CMK16GX4M1A2400C14 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 63

左右 -85% 更低的延时
更快的读取速度，GB/s

14.7 7.7

测试中的平均数值
更快的写入速度，GB/s

9.7 5.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Mushkin 991679ES 996679ES 2GB

Corsair CMK16GX4M1A2400C14 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

63 34
读取速度，GB/s

7.7 14.7
写入速度，GB/s

5.0 9.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1130 2776

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16KTF1G64HZ-1G6N1 8GB

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Samsung M471B1G73BH0-CK0 8GB

Samsung M378B5273DH0-CH9 4GB

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G Skill Intl F4-4266C19-8GTZKW 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

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G Skill Intl F4-3600C18-8GVK 8GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

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G Skill Intl F4-4400C16-8GTZR 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

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Samsung M393A1G43DB1-CRC 8GB

Mushkin 994083 4GB

Mushkin 994083 4GB

Crucial Technology BLS8G4D30AESCK.M8FE 8GB

Crucial Technology BLS8G4D30AESCK.M8FE 8GB