Mushkin 991679ES 996679ES 2GB vs Corsair CMK64GX4M4B3600C18 16GB

总分

Mushkin 991679ES 996679ES 2GB

Mushkin 991679ES 996679ES 2GB

总分

Corsair CMK64GX4M4B3600C18 16GB

Corsair CMK64GX4M4B3600C18 16GB

差异规格评论

差异

Mushkin 991679ES 996679ES 2GB

需要考虑的原因
Mushkin 991679ES 996679ES 2GB

报告一个错误

Corsair CMK64GX4M4B3600C18 16GB

需要考虑的原因
Corsair CMK64GX4M4B3600C18 16GB

报告一个错误

低于PassMark测试中的延时，ns

35 63

左右 -80% 更低的延时
更快的读取速度，GB/s

16.1 7.7

测试中的平均数值
更快的写入速度，GB/s

14.8 5.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Mushkin 991679ES 996679ES 2GB

Corsair CMK64GX4M4B3600C18 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

63 35
读取速度，GB/s

7.7 16.1
写入速度，GB/s

5.0 14.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1130 3423

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK4GX4M1D2400C14 4GB

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Corsair VSA2GSDS667C4 2GB

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Corsair CMT64GX4M4Z3600C18 16GB

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Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

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Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

Crucial Technology BLT8G4D32AET4K.M8FE1 8GB

Crucial Technology BLT8G4D32AET4K.M8FE1 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

SK Hynix HMA82GS6CJR8N-V-V 16GB

SK Hynix HMA82GS6CJR8N-V-V 16GB

SK Hynix HMT325S6BFR8C-H9 2GB

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SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB

SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Kingston LV32D4U2S8ME-16X 16GB