Mushkin 991679ES 996679ES 2GB vs Crucial Technology CT16G4DFRA266.C16FP 16GB

总分

Mushkin 991679ES 996679ES 2GB

Mushkin 991679ES 996679ES 2GB

总分

Crucial Technology CT16G4DFRA266.C16FP 16GB

Crucial Technology CT16G4DFRA266.C16FP 16GB

差异规格评论

差异

Mushkin 991679ES 996679ES 2GB

需要考虑的原因
Mushkin 991679ES 996679ES 2GB

报告一个错误

Crucial Technology CT16G4DFRA266.C16FP 16GB

需要考虑的原因
Crucial Technology CT16G4DFRA266.C16FP 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 63

左右 -91% 更低的延时
更快的读取速度，GB/s

15 7.7

测试中的平均数值
更快的写入速度，GB/s

10.4 5.0

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Mushkin 991679ES 996679ES 2GB

Crucial Technology CT16G4DFRA266.C16FP 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

63 33
读取速度，GB/s

7.7 15.0
写入速度，GB/s

5.0 10.4
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1130 2827

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DQKD1A08 1GB

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Samsung M391B5673EH1-CH9 2GB

SK Hynix HMA81GU7AFR8N-UH 8GB

SK Hynix HMA81GU7AFR8N-UH 8GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB

Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB