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Mushkin 991679ES 996679ES 2GB
Golden Empire CL14-16-16 D4-3000 4GB

Mushkin 991679ES 996679ES 2GB vs Golden Empire CL14-16-16 D4-3000 4GB

总分
star star star star star
Mushkin 991679ES 996679ES 2GB

Mushkin 991679ES 996679ES 2GB

总分
star star star star star
Golden Empire CL14-16-16 D4-3000 4GB

Golden Empire CL14-16-16 D4-3000 4GB

差异 规格 评论

差异

Mushkin 991679ES 996679ES 2GB 需要考虑的原因
Mushkin 991679ES 996679ES 2GB
报告一个错误
Golden Empire CL14-16-16 D4-3000 4GB 需要考虑的原因
Golden Empire CL14-16-16 D4-3000 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 63
    左右 -200% 更低的延时
  • 更快的读取速度，GB/s
    17.7 left arrow 7.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.1 left arrow 5.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Mushkin 991679ES 996679ES 2GB
Golden Empire CL14-16-16 D4-3000 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    63 left arrow 21
  • 读取速度，GB/s
    7.7 left arrow 17.7
  • 写入速度，GB/s
    5.0 left arrow 13.1
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1130 left arrow 2833

Mushkin 991679ES 996679ES 2GB RAM的比较

Kingston 9905403-084.A01LF 2GB
Corsair CM4X8GF2666C16K8 8GB

Golden Empire CL14-16-16 D4-3000 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
Kingston 9905701-004.A00G 16GB
Kingston 9905701-004.A00G 16GB
内存RAM
Mushkin 991679ES 996679ES 2GB
Mushkin 991679ES 996679ES 2GB
Golden Empire CL14-16-16 D4-3000 4GB
Golden Empire CL14-16-16 D4-3000 4GB
内存RAM
Kingston 99U5474-022.A00LF 2GB
Kingston 99U5474-022.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N-TF 32GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Kingston KTP9W1-MIE 16GB
Kingston KTP9W1-MIE 16GB
内存RAM
A-DATA Technology DDR3 1333G 2GB
A-DATA Technology DDR3 1333G 2GB
Crucial Technology BLS16G4D240FSC.16FBD 16GB
Crucial Technology BLS16G4D240FSC.16FBD 16GB
内存RAM
SK Hynix HMT41GU7BFR8A-PB 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Apacer Technology 78.C1GS7.AUC0B 8GB
Apacer Technology 78.C1GS7.AUC0B 8GB
内存RAM
Golden Empire CL5-5-5DDR2 1GB
Golden Empire CL5-5-5DDR2 1GB
Samsung M471A1K1KCB1-CRC 8GB
Samsung M471A1K1KCB1-CRC 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Apacer Technology 78.CAGPE.AUF0B 8GB
Apacer Technology 78.CAGPE.AUF0B 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Corsair CMK8GX4M2B4133C19 4GB
Corsair CMK8GX4M2B4133C19 4GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
Avant Technology J642GU42J5213N1 16GB
Avant Technology J642GU42J5213N1 16GB
内存RAM
Kingston HP669238-071-HYC 4GB
Kingston HP669238-071-HYC 4GB
Kingston XRMWRN-MIE 16GB
Kingston XRMWRN-MIE 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Samsung M378A2K43BB1-CRC 16GB
Samsung M378A2K43BB1-CRC 16GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Nanya Technology NT8GA64D88CX3S-JR 8GB
Nanya Technology NT8GA64D88CX3S-JR 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
内存RAM