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Mushkin 991679ES 996679ES 2GB
Kingston 9965662-008.A01G 16GB

Mushkin 991679ES 996679ES 2GB vs Kingston 9965662-008.A01G 16GB

总分
star star star star star
Mushkin 991679ES 996679ES 2GB

Mushkin 991679ES 996679ES 2GB

总分
star star star star star
Kingston 9965662-008.A01G 16GB

Kingston 9965662-008.A01G 16GB

差异 规格 评论

差异

Mushkin 991679ES 996679ES 2GB 需要考虑的原因
Mushkin 991679ES 996679ES 2GB
报告一个错误
Kingston 9965662-008.A01G 16GB 需要考虑的原因
Kingston 9965662-008.A01G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 63
    左右 -91% 更低的延时
  • 更快的读取速度，GB/s
    9.8 left arrow 7.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.6 left arrow 5.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Mushkin 991679ES 996679ES 2GB
Kingston 9965662-008.A01G 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    63 left arrow 33
  • 读取速度，GB/s
    7.7 left arrow 9.8
  • 写入速度，GB/s
    5.0 left arrow 7.6
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1130 left arrow 2291

Mushkin 991679ES 996679ES 2GB RAM的比较

Kingston 9905403-084.A01LF 2GB
Corsair CM4X8GF2666C16K8 8GB

Kingston 9965662-008.A01G 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
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内存RAM
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内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
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Corsair CMX8GX3M2A2000C9 4GB
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内存RAM
Kingston 99U5474-023.A00LF 4GB
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SK Hynix HMA451U7AFR8N-TF 4GB
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内存RAM
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Kingston XF875V-HYA 8GB
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内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Crucial Technology BLE8G4D30AEEA.K16FD 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
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内存RAM
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Samsung M393B5270CH0-CH9 4GB
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内存RAM
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G Skill Intl F4-3000C16-8GTZR 8GB
内存RAM