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Mushkin 991679ES 996679ES 2GB
Micron Technology 8ATF51264AZ-2G1AY 4GB

Mushkin 991679ES 996679ES 2GB vs Micron Technology 8ATF51264AZ-2G1AY 4GB

总分
star star star star star
Mushkin 991679ES 996679ES 2GB

Mushkin 991679ES 996679ES 2GB

总分
star star star star star
Micron Technology 8ATF51264AZ-2G1AY 4GB

Micron Technology 8ATF51264AZ-2G1AY 4GB

差异 规格 评论

差异

Mushkin 991679ES 996679ES 2GB 需要考虑的原因
Mushkin 991679ES 996679ES 2GB
报告一个错误
Micron Technology 8ATF51264AZ-2G1AY 4GB 需要考虑的原因
Micron Technology 8ATF51264AZ-2G1AY 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 63
    左右 -125% 更低的延时
  • 更快的读取速度，GB/s
    13.8 left arrow 7.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.7 left arrow 5.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Mushkin 991679ES 996679ES 2GB
Micron Technology 8ATF51264AZ-2G1AY 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    63 left arrow 28
  • 读取速度，GB/s
    7.7 left arrow 13.8
  • 写入速度，GB/s
    5.0 left arrow 8.7
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1130 left arrow 2443

Mushkin 991679ES 996679ES 2GB RAM的比较

Kingston 9905403-084.A01LF 2GB
Corsair CM4X8GF2666C16K8 8GB

Micron Technology 8ATF51264AZ-2G1AY 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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内存RAM
Mushkin 991679ES 996679ES 2GB
Mushkin 991679ES 996679ES 2GB
Micron Technology 8ATF51264AZ-2G1AY 4GB
Micron Technology 8ATF51264AZ-2G1AY 4GB
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内存RAM
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内存RAM
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内存RAM
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