Mushkin 991988 (996988) 4GB vs Micron Technology 4ATF51264AZ-2G3B1 4GB

总分

Mushkin 991988 (996988) 4GB

Mushkin 991988 (996988) 4GB

总分

Micron Technology 4ATF51264AZ-2G3B1 4GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

差异规格评论

差异

Mushkin 991988 (996988) 4GB

需要考虑的原因
Mushkin 991988 (996988) 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 34

左右 32% 更低的延时

Micron Technology 4ATF51264AZ-2G3B1 4GB

需要考虑的原因
Micron Technology 4ATF51264AZ-2G3B1 4GB

报告一个错误

更快的读取速度，GB/s

15.6 14

测试中的平均数值
更快的写入速度，GB/s

11.2 8.9

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Mushkin 991988 (996988) 4GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 34
读取速度，GB/s

14.0 15.6
写入速度，GB/s

8.9 11.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2388 2468

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Mushkin 991988 (996988) 4GB

Mushkin 991988 (996988) 4GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Kingston KHX3200C20S4/8G 8GB

Kingston KHX3200C20S4/8G 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

King Tiger Technology Tigo-2400MHz-8G 8GB

King Tiger Technology Tigo-2400MHz-8G 8GB

Kingston 99U5584-007.A00LF 4GB

Kingston 99U5584-007.A00LF 4GB

Crucial Technology BL16G36C16U4R.M8FB1 16GB

Crucial Technology BL16G36C16U4R.M8FB1 16GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Corsair CMD16GX4M4A2800C16 4GB

Corsair CMD16GX4M4A2800C16 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 8ATF1G64AZ-3G2E1 8GB

Micron Technology 8ATF1G64AZ-3G2E1 8GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

SK Hynix HMA84GR7AFR4N-VK 32GB

SK Hynix HMA84GR7AFR4N-VK 32GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Samsung M393A2K40BB1-CRC 16GB

Samsung M393A2K40BB1-CRC 16GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Kingston MSI32D4S2S1ME-8 8GB

Kingston MSI32D4S2S1ME-8 8GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

Hewlett-Packard 7EH61AA# 8GB

Hewlett-Packard 7EH61AA# 8GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Corsair CMR16GX4M2C 8GB

Corsair CMR16GX4M2C 8GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

G Skill Intl F4-2666C15-8GVS 8GB

G Skill Intl F4-2666C15-8GVS 8GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

SK Hynix GKE800SO51208-2133AH 8GB

SK Hynix GKE800SO51208-2133AH 8GB

Elpida EBJ40UG8BBU0-GN-F 4GB

Elpida EBJ40UG8BBU0-GN-F 4GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB