Mushkin 991988 (996988) 4GB vs SK Hynix HMA41GU6AFR8N-TF 8GB

总分

Mushkin 991988 (996988) 4GB

Mushkin 991988 (996988) 4GB

总分

SK Hynix HMA41GU6AFR8N-TF 8GB

SK Hynix HMA41GU6AFR8N-TF 8GB

差异规格评论

差异

Mushkin 991988 (996988) 4GB

需要考虑的原因
Mushkin 991988 (996988) 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 36

左右 36% 更低的延时

SK Hynix HMA41GU6AFR8N-TF 8GB

需要考虑的原因
SK Hynix HMA41GU6AFR8N-TF 8GB

报告一个错误

更快的读取速度，GB/s

15.3 14

测试中的平均数值
更快的写入速度，GB/s

11.1 8.9

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Mushkin 991988 (996988) 4GB

SK Hynix HMA41GU6AFR8N-TF 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 36
读取速度，GB/s

14.0 15.3
写入速度，GB/s

8.9 11.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2388 2696

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Mushkin 991988 (996988) 4GB

Mushkin 991988 (996988) 4GB

SK Hynix HMA41GU6AFR8N-TF 8GB

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Samsung M471B1G73DB0-YK0 8GB

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Kingston MSI24D4S7D8MB-16 16GB

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Chun Well Technology Holding Limited MD4U1632161DCW 16GB

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Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

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Samsung M471A1K1KCB1-CRC 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

G Skill Intl F4-2800C15-4GTZ 4GB

G Skill Intl F4-2800C15-4GTZ 4GB

AMD R538G1601U2S 8GB

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Kingston 9905702-136.A00G 8GB

Kingston 9905702-136.A00G 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Apacer Technology 78.B1GM3.C7W0B 4GB

Apacer Technology 78.B1GM3.C7W0B 4GB