Nanya Technology M2F2G64CB88B7N-CG 2GB vs Kingston KHX2400C15D4/4G 4GB

总分

Nanya Technology M2F2G64CB88B7N-CG 2GB

Nanya Technology M2F2G64CB88B7N-CG 2GB

总分

Kingston KHX2400C15D4/4G 4GB

Kingston KHX2400C15D4/4G 4GB

差异规格评论

差异

Nanya Technology M2F2G64CB88B7N-CG 2GB

需要考虑的原因
Nanya Technology M2F2G64CB88B7N-CG 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 31

左右 16% 更低的延时

Kingston KHX2400C15D4/4G 4GB

需要考虑的原因
Kingston KHX2400C15D4/4G 4GB

报告一个错误

更快的读取速度，GB/s

16.9 12.1

测试中的平均数值
更快的写入速度，GB/s

12.5 7.2

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F2G64CB88B7N-CG 2GB

Kingston KHX2400C15D4/4G 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 31
读取速度，GB/s

12.1 16.9
写入速度，GB/s

7.2 12.5
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1676 2909

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology M2F2G64CB88B7N-CG 2GB

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Kingston 99U5712-002.A00G 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Crucial Technology CT4G4DFS8213.C8FAD11 4GB

Crucial Technology CT4G4DFS8213.C8FAD11 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Kingmax Semiconductor GLAF62F-D8---------- 4GB

Kingmax Semiconductor GLAF62F-D8---------- 4GB

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Kingston 39P5429-006.AO01 2GB

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Kingston 9905624-018.A00G 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

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Kingston 8ATF1G64AZ-2G1B1 8GB