Nanya Technology M2F4G64CB8HB9N-CG 4GB vs G Skill Intl F4-2800C15-4GVR 4GB

总分

Nanya Technology M2F4G64CB8HB9N-CG 4GB

Nanya Technology M2F4G64CB8HB9N-CG 4GB

总分

G Skill Intl F4-2800C15-4GVR 4GB

G Skill Intl F4-2800C15-4GVR 4GB

差异规格评论

差异

Nanya Technology M2F4G64CB8HB9N-CG 4GB

需要考虑的原因
Nanya Technology M2F4G64CB8HB9N-CG 4GB

报告一个错误

G Skill Intl F4-2800C15-4GVR 4GB

需要考虑的原因
G Skill Intl F4-2800C15-4GVR 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 24

左右 -14% 更低的延时
更快的读取速度，GB/s

18.6 13.2

测试中的平均数值
更快的写入速度，GB/s

14.1 8.8

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F4G64CB8HB9N-CG 4GB

G Skill Intl F4-2800C15-4GVR 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

24 21
读取速度，GB/s

13.2 18.6
写入速度，GB/s

8.8 14.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2301 3062

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B1K70CH0-CH9 8GB

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Micron Technology 16ATF2G64AZ-2G1A1 16GB

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Crucial Technology CT8G4DFS8266.M8FJ 8GB

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Apacer Technology 78.B1GET.AU00C 4GB

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Kingston 9965600-018.A00G 16GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Crucial Technology CT32G4SFD832A.C16FB 32GB

Crucial Technology CT32G4SFD832A.C16FB 32GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

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Gold Key Technology Co Ltd NMUD480E82-3200D 8GB

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Mushkin 991988 (996988) 4GB

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Corsair CMK16GX4M1A2400C16 16GB