Nanya Technology M2F4G64CB8HG4N-CG 4GB vs G Skill Intl F4-3333C16-16GTZKW 16GB

总分

Nanya Technology M2F4G64CB8HG4N-CG 4GB

Nanya Technology M2F4G64CB8HG4N-CG 4GB

总分

G Skill Intl F4-3333C16-16GTZKW 16GB

G Skill Intl F4-3333C16-16GTZKW 16GB

差异规格评论

差异

Nanya Technology M2F4G64CB8HG4N-CG 4GB

需要考虑的原因
Nanya Technology M2F4G64CB8HG4N-CG 4GB

报告一个错误

G Skill Intl F4-3333C16-16GTZKW 16GB

需要考虑的原因
G Skill Intl F4-3333C16-16GTZKW 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 26

左右 -13% 更低的延时
更快的读取速度，GB/s

17.2 12.7

测试中的平均数值
更快的写入速度，GB/s

12.9 7.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F4G64CB8HG4N-CG 4GB

G Skill Intl F4-3333C16-16GTZKW 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 23
读取速度，GB/s

12.7 17.2
写入速度，GB/s

7.4 12.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2046 3227

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3300C16-16GTZKW 16GB

G Skill Intl F4-3300C16-16GTZKW 16GB

G Skill Intl F3-1600C11-4GIS 4GB

G Skill Intl F3-1600C11-4GIS 4GB

G Skill Intl F4-3200C16-16GTZKY 16GB

G Skill Intl F4-3200C16-16GTZKY 16GB

Nanya Technology NT512T64U88B0BY-3C 512MB

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G Skill Intl F3-17000CL9-4GBXLD 4GB

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Kingston 99U5474-028.A00LF 4GB

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Micron Technology 8ATF1G64HZ-2G6E3 8GB

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Team Group Inc. TEAMGROUP-D4-3866 4GB

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AMD R538G1601U2S 8GB

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Gloway International Co. Ltd. TYA4U2666D19161C 16GB

Kingston 99U5428-063.A00LF 8GB

Kingston 99U5428-063.A00LF 8GB

V-GEN D4H4GL26A8TS5 4GB

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Samsung M393B5170FH0-CK0 4GB

Crucial Technology BLM8G40C18U4B.M8FE1 8GB

Crucial Technology BLM8G40C18U4B.M8FE1 8GB

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Crucial Technology CT25664BA160B.C16F 2GB

Kingston 99U5625-015.A00G 16GB

Kingston 99U5625-015.A00G 16GB