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Nanya Technology M2F4G64CB8HG4N-DI 4GB
G Skill Intl F4-3200C14-8GVK 8GB

Nanya Technology M2F4G64CB8HG4N-DI 4GB vs G Skill Intl F4-3200C14-8GVK 8GB

总分
star star star star star
Nanya Technology M2F4G64CB8HG4N-DI 4GB

Nanya Technology M2F4G64CB8HG4N-DI 4GB

总分
star star star star star
G Skill Intl F4-3200C14-8GVK 8GB

G Skill Intl F4-3200C14-8GVK 8GB

差异 规格 评论

差异

Nanya Technology M2F4G64CB8HG4N-DI 4GB 需要考虑的原因
Nanya Technology M2F4G64CB8HG4N-DI 4GB
报告一个错误
G Skill Intl F4-3200C14-8GVK 8GB 需要考虑的原因
G Skill Intl F4-3200C14-8GVK 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 34
    左右 -42% 更低的延时
  • 更快的读取速度，GB/s
    19.9 left arrow 14.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.9 left arrow 9.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2F4G64CB8HG4N-DI 4GB
G Skill Intl F4-3200C14-8GVK 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    34 left arrow 24
  • 读取速度，GB/s
    14.1 left arrow 19.9
  • 写入速度，GB/s
    9.4 left arrow 15.9
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2340 left arrow 3779

Nanya Technology M2F4G64CB8HG4N-DI 4GB RAM的比较

Kingston KVT8FP-HYC 4GB
Crucial Technology BLS16G4D26BFSE.16FD 16GB

G Skill Intl F4-3200C14-8GVK 8GB RAM的比较

Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
G Skill Intl F4-3000C15-8GRRB 8GB
G Skill Intl F4-3000C15-8GRRB 8GB
内存RAM
Nanya Technology M2F4G64CB8HG4N-DI 4GB
Nanya Technology M2F4G64CB8HG4N-DI 4GB
G Skill Intl F4-3200C14-8GVK 8GB
G Skill Intl F4-3200C14-8GVK 8GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
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Ramaxel Technology RMUA5120ME86H9F-2666 4GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Crucial Technology CB8GU2666.C8ET 8GB
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内存RAM
AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
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内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
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内存RAM
G Skill Intl F3-1600C9-4GAO 4GB
G Skill Intl F3-1600C9-4GAO 4GB
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Crucial Technology CT4G4SFS824A.C8FBD2 4GB
内存RAM
Kingston ACR16D3LS1NGG/4G 4GB
Kingston ACR16D3LS1NGG/4G 4GB
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内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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G Skill Intl F4-3200C16-8GTZKW 8GB
内存RAM
takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
SK Hynix HMA451U7MFR8N-TF 4GB
SK Hynix HMA451U7MFR8N-TF 4GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
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内存RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
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Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
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G Skill Intl F4-4400C18-8GTZRC 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Corsair CM4X8GF2400C16S4 8GB
Corsair CM4X8GF2400C16S4 8GB
内存RAM