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Nanya Technology M2F4G64CB8HG5N-CG 4GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB

Nanya Technology M2F4G64CB8HG5N-CG 4GB vs A-DATA Technology AO1P21FC8T1-BSKS 8GB

总分
star star star star star
Nanya Technology M2F4G64CB8HG5N-CG 4GB

Nanya Technology M2F4G64CB8HG5N-CG 4GB

总分
star star star star star
A-DATA Technology AO1P21FC8T1-BSKS 8GB

A-DATA Technology AO1P21FC8T1-BSKS 8GB

差异 规格 评论

差异

Nanya Technology M2F4G64CB8HG5N-CG 4GB 需要考虑的原因
Nanya Technology M2F4G64CB8HG5N-CG 4GB
报告一个错误
A-DATA Technology AO1P21FC8T1-BSKS 8GB 需要考虑的原因
A-DATA Technology AO1P21FC8T1-BSKS 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 41
    左右 -14% 更低的延时
  • 更快的读取速度，GB/s
    13.6 left arrow 13.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.7 left arrow 8.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2F4G64CB8HG5N-CG 4GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 36
  • 读取速度，GB/s
    13.3 left arrow 13.6
  • 写入速度，GB/s
    8.2 left arrow 8.7
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1982 left arrow 2231

Nanya Technology M2F4G64CB8HG5N-CG 4GB RAM的比较

Elpida EBJ21UE8BDF0-DJ-F 2GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB

A-DATA Technology AO1P21FC8T1-BSKS 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology M2F4G64CB8HG5N-CG 4GB
Nanya Technology M2F4G64CB8HG5N-CG 4GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
G Skill Intl F4-4400C17-16GVK 16GB
G Skill Intl F4-4400C17-16GVK 16GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Corsair CMV8GX4M1A2666C18 8GB
Corsair CMV8GX4M1A2666C18 8GB
内存RAM
Ramaxel Technology RMN1740HC48D8F667A 2GB
Ramaxel Technology RMN1740HC48D8F667A 2GB
SK Hynix HMA81GU7CJR8N-VK 8GB
SK Hynix HMA81GU7CJR8N-VK 8GB
内存RAM
Mushkin 991988 (996988) 4GB
Mushkin 991988 (996988) 4GB
Samsung M471A2K43BB1-CRC 16GB
Samsung M471A2K43BB1-CRC 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Samsung M471A5644EB0-CPB 2GB
Samsung M471A5644EB0-CPB 2GB
内存RAM
Crucial Technology BL51264BA160A.16FH 4GB
Crucial Technology BL51264BA160A.16FH 4GB
InnoDisk Corporation M4C0-AGS1TCIK 16GB
InnoDisk Corporation M4C0-AGS1TCIK 16GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB
SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Crucial Technology CT16G4DFD824A.M16FH 16GB
Crucial Technology CT16G4DFD824A.M16FH 16GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT8G4DFD824A.C16FE 8GB
Crucial Technology CT8G4DFD824A.C16FE 8GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
Crucial Technology BLS16G4D240FSC.16FAD 16GB
Crucial Technology BLS16G4D240FSC.16FAD 16GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Kingston 9905702-027.A00G 8GB
Kingston 9905702-027.A00G 8GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
Wilk Elektronik S.A. IR2400D464L15S/8G 8GB
Wilk Elektronik S.A. IR2400D464L15S/8G 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
A-DATA Technology AO1P32MCST2-BW4S 16GB
A-DATA Technology AO1P32MCST2-BW4S 16GB
内存RAM