Nanya Technology M2F4G64CB8HG5N-CG 4GB vs Corsair CMD32GX4M2C3200C14M 16GB

总分

Nanya Technology M2F4G64CB8HG5N-CG 4GB

Nanya Technology M2F4G64CB8HG5N-CG 4GB

总分

Corsair CMD32GX4M2C3200C14M 16GB

Corsair CMD32GX4M2C3200C14M 16GB

差异规格评论

差异

Nanya Technology M2F4G64CB8HG5N-CG 4GB

需要考虑的原因
Nanya Technology M2F4G64CB8HG5N-CG 4GB

报告一个错误

Corsair CMD32GX4M2C3200C14M 16GB

需要考虑的原因
Corsair CMD32GX4M2C3200C14M 16GB

报告一个错误

低于PassMark测试中的延时，ns

18 41

左右 -128% 更低的延时
更快的读取速度，GB/s

21.3 13.3

测试中的平均数值
更快的写入速度，GB/s

16.9 8.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F4G64CB8HG5N-CG 4GB

Corsair CMD32GX4M2C3200C14M 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 18
读取速度，GB/s

13.3 21.3
写入速度，GB/s

8.2 16.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1982 3836

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3200C16-32GTZN 32GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Crucial Technology BLS4G4D240FSE.8FBD2 4GB