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Nanya Technology M2F4G64CB8HG5N-CG 4GB
Crucial Technology BLS8G4D26BFSC.16FBR2 8GB

Nanya Technology M2F4G64CB8HG5N-CG 4GB vs Crucial Technology BLS8G4D26BFSC.16FBR2 8GB

总分
star star star star star
Nanya Technology M2F4G64CB8HG5N-CG 4GB

Nanya Technology M2F4G64CB8HG5N-CG 4GB

总分
star star star star star
Crucial Technology BLS8G4D26BFSC.16FBR2 8GB

Crucial Technology BLS8G4D26BFSC.16FBR2 8GB

差异 规格 评论

差异

Nanya Technology M2F4G64CB8HG5N-CG 4GB 需要考虑的原因
Nanya Technology M2F4G64CB8HG5N-CG 4GB
报告一个错误
Crucial Technology BLS8G4D26BFSC.16FBR2 8GB 需要考虑的原因
Crucial Technology BLS8G4D26BFSC.16FBR2 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 41
    左右 -52% 更低的延时
  • 更快的读取速度，GB/s
    15.6 left arrow 13.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.9 left arrow 8.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2F4G64CB8HG5N-CG 4GB
Crucial Technology BLS8G4D26BFSC.16FBR2 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 27
  • 读取速度，GB/s
    13.3 left arrow 15.6
  • 写入速度，GB/s
    8.2 left arrow 13.9
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1982 left arrow 2964

Nanya Technology M2F4G64CB8HG5N-CG 4GB RAM的比较

Elpida EBJ21UE8BDF0-DJ-F 2GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB

Crucial Technology BLS8G4D26BFSC.16FBR2 8GB RAM的比较

Corsair CM5S16GM4800A40K2 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

Nanya Technology M2F4G64CB8HG5N-CG 4GB
Nanya Technology M2F4G64CB8HG5N-CG 4GB
Crucial Technology BLS8G4D26BFSC.16FBR2 8GB
Crucial Technology BLS8G4D26BFSC.16FBR2 8GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Kingston 9905744-024.A00G 16GB
Kingston 9905744-024.A00G 16GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Corsair CMSX16GX4M2A3000C18 8GB
Corsair CMSX16GX4M2A3000C18 8GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Asgard VMA45UG-MEC1U2BQ2 8GB
Asgard VMA45UG-MEC1U2BQ2 8GB
内存RAM
Mushkin 991988 (996988) 4GB
Mushkin 991988 (996988) 4GB
Samsung M393A2K40BB0-CPB 16GB
Samsung M393A2K40BB0-CPB 16GB
内存RAM
Kingston ACR16D3LS1NGG/2G 2GB
Kingston ACR16D3LS1NGG/2G 2GB
Crucial Technology BLS4G4D26BFSB.8FD2 4GB
Crucial Technology BLS4G4D26BFSB.8FD2 4GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Maxsun MSD48G26Q3 8GB
Maxsun MSD48G26Q3 8GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Avant Technology J644GU44J1293NF 32GB
Avant Technology J644GU44J1293NF 32GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
G Skill Intl F4-2800C15-8GVR 8GB
G Skill Intl F4-2800C15-8GVR 8GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology BLS8G4S26BFSD.16FD2 8GB
Crucial Technology BLS8G4S26BFSD.16FD2 8GB
内存RAM
Kingston ACR32D4U2S8HD-8X 8GB
Kingston ACR32D4U2S8HD-8X 8GB
Corsair CMWS8GL3200K16W4E 8GB
Corsair CMWS8GL3200K16W4E 8GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Kingston 9905630-063.A00G 16GB
Kingston 9905630-063.A00G 16GB
内存RAM
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
Corsair CMW64GX4M4E3200C16 16GB
Corsair CMW64GX4M4E3200C16 16GB
内存RAM