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Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Crucial Technology BL16G36C16U4W.M16FE1 16GB
比较
Nanya Technology M2F4GH64CB8HB6N-CG 4GB vs Crucial Technology BL16G36C16U4W.M16FE1 16GB
总分
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
总分
Crucial Technology BL16G36C16U4W.M16FE1 16GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
报告一个错误
低于PassMark测试中的延时,ns
26
32
左右 19% 更低的延时
需要考虑的原因
Crucial Technology BL16G36C16U4W.M16FE1 16GB
报告一个错误
更快的读取速度,GB/s
17.8
12.3
测试中的平均数值
更快的写入速度,GB/s
15.3
7.1
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Crucial Technology BL16G36C16U4W.M16FE1 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
32
读取速度,GB/s
12.3
17.8
写入速度,GB/s
7.1
15.3
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1952
3593
Nanya Technology M2F4GH64CB8HB6N-CG 4GB RAM的比较
SK Hynix HMT125U6DFR8C-H9 2GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
Crucial Technology BL16G36C16U4W.M16FE1 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Samsung M378A1K43BB1-CRC 8GB
Samsung M471B1G73DB0-YK0 8GB
Corsair CMW64GX4M8X3600C18 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
V-Color Technology Inc. TN48G26S819-SB 8GB
报告一个错误
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Bug description
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