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Nanya Technology M2F4GH64CB8HB6N-CG 4GB
G Skill Intl F4-4000C16-8GTZR 8GB
比较
Nanya Technology M2F4GH64CB8HB6N-CG 4GB vs G Skill Intl F4-4000C16-8GTZR 8GB
总分
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
总分
G Skill Intl F4-4000C16-8GTZR 8GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
报告一个错误
需要考虑的原因
G Skill Intl F4-4000C16-8GTZR 8GB
报告一个错误
更快的读取速度,GB/s
18.2
12.3
测试中的平均数值
更快的写入速度,GB/s
17.2
7.1
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
G Skill Intl F4-4000C16-8GTZR 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
26
读取速度,GB/s
12.3
18.2
写入速度,GB/s
7.1
17.2
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1952
3885
Nanya Technology M2F4GH64CB8HB6N-CG 4GB RAM的比较
SK Hynix HMT125U6DFR8C-H9 2GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
G Skill Intl F4-4000C16-8GTZR 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
ASint Technology SSA302G08-EGN1C 4GB
Kingmax Semiconductor GLLG42F-18---------- 8GB
Corsair CM2X2048-6400C5DHX 2GB
AMD R7S48G2400U2S 8GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
G Skill Intl F4-4000C16-8GTZR 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston 9905700-013.A00G 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT8G4DFD8213.C16FBD1 8GB
Kingston 99U5469-045.A00LF 4GB
DSL Memory D4SS1G081SH24A-A 8GB
Team Group Inc. UD5-6400 16GB
Kingston KHX2400C14S4/8G 8GB
Samsung M471B5273EB0-CK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N
Kingston 99U5458-002.A00LF 2GB
Samsung M471A1K43DB1-CWE 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-2133C15-4GRR 4GB
A-DATA Technology DDR3 1600 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N
Samsung M378B5273CH0-CH9 4GB
Kingston 9905622-051.A00G 8GB
Kingston 9905469-143.A00LF 4GB
Corsair CM4X16GD3200C16K4E 16GB
报告一个错误
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Bug description
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