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Nanya Technology M2F4GH64CB8HB6N-CG 4GB
G Skill Intl F4-4200C19-4GTZ 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB vs G Skill Intl F4-4200C19-4GTZ 4GB

总分
star star star star star
Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

总分
star star star star star
G Skill Intl F4-4200C19-4GTZ 4GB

G Skill Intl F4-4200C19-4GTZ 4GB

差异 规格 评论

差异

Nanya Technology M2F4GH64CB8HB6N-CG 4GB 需要考虑的原因
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 75
    左右 65% 更低的延时
G Skill Intl F4-4200C19-4GTZ 4GB 需要考虑的原因
G Skill Intl F4-4200C19-4GTZ 4GB
报告一个错误
  • 更快的读取速度，GB/s
    14.5 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.6 left arrow 7.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
G Skill Intl F4-4200C19-4GTZ 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 75
  • 读取速度，GB/s
    12.3 left arrow 14.5
  • 写入速度，GB/s
    7.1 left arrow 7.6
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1952 left arrow 1735

Nanya Technology M2F4GH64CB8HB6N-CG 4GB RAM的比较

SK Hynix HMT125U6DFR8C-H9 2GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

G Skill Intl F4-4200C19-4GTZ 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
G Skill Intl F4-4200C19-4GTZ 4GB
G Skill Intl F4-4200C19-4GTZ 4GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Corsair CMD32GX4M4C3000C15 8GB
Corsair CMD32GX4M4C3000C15 8GB
内存RAM
Kingston 9905403-515.A00LF 8GB
Kingston 9905403-515.A00LF 8GB
G Skill Intl F4-4400C17-16GTZR 16GB
G Skill Intl F4-4400C17-16GTZR 16GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Wilk Elektronik S.A. GY2400D464L15S/4G 4GB
Wilk Elektronik S.A. GY2400D464L15S/4G 4GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Crucial Technology BLS8G4S26BFSDK.8FBD 8GB
Crucial Technology BLS8G4S26BFSDK.8FBD 8GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Kingston HX432C15PB3/16 16GB
Kingston HX432C15PB3/16 16GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
G Skill Intl F4-4000C16-8GTZRA 8GB
G Skill Intl F4-4000C16-8GTZRA 8GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
内存RAM
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Crucial Technology BL16G30C15U4B.M16FE1 16GB
Crucial Technology BL16G30C15U4B.M16FE1 16GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
G Skill Intl F4-3200C16-8GTZ 8GB
G Skill Intl F4-3200C16-8GTZ 8GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Chun Well Technology Holding Limited D4U0830160B 8GB
Chun Well Technology Holding Limited D4U0830160B 8GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Corsair CM4X16GE2400Z16K4 16GB
Corsair CM4X16GE2400Z16K4 16GB
内存RAM
Ramaxel Technology RMT3020EC58E9F1333 4GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
G Skill Intl F4-3000C14-8GVK 8GB
G Skill Intl F4-3000C14-8GVK 8GB
内存RAM