Nanya Technology M2F4GH64CB8HB6N-CG 4GB vs Wilk Elektronik S.A. GR2133D464L15S/8G 8GB

总分

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

总分

Wilk Elektronik S.A. GR2133D464L15S/8G 8GB

Wilk Elektronik S.A. GR2133D464L15S/8G 8GB

差异规格评论

差异

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

需要考虑的原因
Nanya Technology M2F4GH64CB8HB6N-CG 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 33

左右 21% 更低的延时

Wilk Elektronik S.A. GR2133D464L15S/8G 8GB

需要考虑的原因
Wilk Elektronik S.A. GR2133D464L15S/8G 8GB

报告一个错误

更快的读取速度，GB/s

14.8 12.3

测试中的平均数值
更快的写入速度，GB/s

10.4 7.1

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Wilk Elektronik S.A. GR2133D464L15S/8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 33
读取速度，GB/s

12.3 14.8
写入速度，GB/s

7.1 10.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1952 2828

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-3300C16-16GTZSW 16GB

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G Skill Intl F3-1333C9-4GIS 4GB

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EXCELERAM EKBLACK4163016AD 8GB

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Samsung M3 93T5750CZA-CE6 2GB

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Kingston 9905678-026.A00G 8GB

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G Skill Intl F4-2800C16-4GRK 4GB

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A-DATA Technology AD73I1B1672EG 2GB

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Crucial Technology CT4G4SFS8213.C8FHP 4GB

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Samsung M378B5673EH1-CF8 2GB

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Corsair CMK16GX4M1Z3600C18 16GB

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Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Gloway International (HK) STKD4GAM2400-F 8GB

Gloway International (HK) STKD4GAM2400-F 8GB

Samsung M471B5773DH0-CH9 2GB

Samsung M471B5773DH0-CH9 2GB

G Skill Intl F4-2666C18-16GRS 16GB

G Skill Intl F4-2666C18-16GRS 16GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Samsung M393A1K43BB1-CTD 8GB

Samsung M393A1K43BB1-CTD 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

G Skill Intl F4-3600C16-8GTZR 8GB

G Skill Intl F4-3600C16-8GTZR 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3600C19-16GTRG 16GB

G Skill Intl F4-3600C19-16GTRG 16GB