Nanya Technology M2F8G64CB8HC9N-DI 8GB vs A-DATA Technology AO2P26KC8T1-BPYS 8GB

总分

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分

A-DATA Technology AO2P26KC8T1-BPYS 8GB

A-DATA Technology AO2P26KC8T1-BPYS 8GB

差异规格评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB

需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB

报告一个错误

更快的写入速度，GB/s

8.6 8.4

测试中的平均数值

A-DATA Technology AO2P26KC8T1-BPYS 8GB

需要考虑的原因
A-DATA Technology AO2P26KC8T1-BPYS 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 37

左右 -28% 更低的延时
更快的读取速度，GB/s

15.4 13.9

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F8G64CB8HC9N-DI 8GB

A-DATA Technology AO2P26KC8T1-BPYS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 29
读取速度，GB/s

13.9 15.4
写入速度，GB/s

8.6 8.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2395 2513

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Apacer Technology 78.CAGMT.40C0B 8GB

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Samsung M378A1K43EB2-CWE 8GB

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SK Hynix HMAA4GS6AJR8N-XN 32GB

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AMD R534G1601U1S-UO 4GB

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Apacer Technology 78.CAGP7.C7Z0B 8GB

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Essencore Limited KD48GU88C-26N1600 8GB

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Golden Empire CL16-16-16 D4-3000 4GB

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Ramaxel Technology RMR5040ED58E9W1600 4GB

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Hoodisk Electronics Co Ltd GKH800UD51208-1600 8GB

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Corsair CM4X8GF2400C16N2 8GB

Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

Crucial Technology CT16G4DFD824A.M16FA 16GB

Crucial Technology CT16G4DFD824A.M16FA 16GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Crucial Technology BLS4G4D26BFSE.8FE 4GB

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Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

G Skill Intl F4-2400C17-8GIS 8GB

G Skill Intl F4-2400C17-8GIS 8GB