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Nanya Technology M2F8G64CB8HC9N-DI 8GB
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

总分
star star star star star
Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分
star star star star star
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

差异 规格 评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB 需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB
报告一个错误
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB 需要考虑的原因
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 37
    左右 -76% 更低的延时
  • 更快的读取速度，GB/s
    18.5 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.0 left arrow 8.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 21
  • 读取速度，GB/s
    13.9 left arrow 18.5
  • 写入速度，GB/s
    8.6 left arrow 14.0
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 12 14 15
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2395 left arrow 3263

Nanya Technology M2F8G64CB8HC9N-DI 8GB RAM的比较

SK Hynix HMT41GR7AFR4C-PB 8GB
Kingston 99P5474-050.A00LF 4GB

Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB RAM的比较

Crucial Technology CT51264BD1339.M16F 4GB
Kingston 9905403-061.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Crucial Technology CT4G4DFS8213.C8FAD11 4GB
Crucial Technology CT4G4DFS8213.C8FAD11 4GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
A-DATA Technology AO1P24HC8T1-BPGS 8GB
A-DATA Technology AO1P24HC8T1-BPGS 8GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Apacer Technology 78.CAGPP.ARC0B 8GB
Apacer Technology 78.CAGPP.ARC0B 8GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Samsung M471A1K43EB1-CWE 8GB
Samsung M471A1K43EB1-CWE 8GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Kingston 9905743-034.A00G 8GB
Kingston 9905743-034.A00G 8GB
内存RAM
Kingston ACR16D3LS1KNG/8G 8GB
Kingston ACR16D3LS1KNG/8G 8GB
G Skill Intl F4-3200C16-8GTZKY 8GB
G Skill Intl F4-3200C16-8GTZKY 8GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
Patriot Memory (PDP Systems) 2133 C14 Series 8GB
Patriot Memory (PDP Systems) 2133 C14 Series 8GB
内存RAM
Micron Technology 4ATF1G64HZ-3G2E1 8GB
Micron Technology 4ATF1G64HZ-3G2E1 8GB
A-DATA Technology AD5U48008G-B 8GB
A-DATA Technology AD5U48008G-B 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3733C17-4GTZ 4GB
G Skill Intl F4-3733C17-4GTZ 4GB
内存RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
Patriot Memory (PDP Systems) PSD44G240081 4GB
Patriot Memory (PDP Systems) PSD44G240081 4GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
G Skill Intl F4-2400C15-8GFT 8GB
G Skill Intl F4-2400C15-8GFT 8GB
内存RAM
Kingston 99U5429-007.A00LF 2GB
Kingston 99U5429-007.A00LF 2GB
Kingston 9905598-040.A00G 16GB
Kingston 9905598-040.A00G 16GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
G Skill Intl F4-4133C19-8GTZKWC 8GB
G Skill Intl F4-4133C19-8GTZKWC 8GB
内存RAM