Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Corsair CM4X32GC3200C16K2E 32GB

总分

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分

Corsair CM4X32GC3200C16K2E 32GB

Corsair CM4X32GC3200C16K2E 32GB

差异规格评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB

需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 41

左右 10% 更低的延时
更快的读取速度，GB/s

13.9 13.5

测试中的平均数值

Corsair CM4X32GC3200C16K2E 32GB

需要考虑的原因
Corsair CM4X32GC3200C16K2E 32GB

报告一个错误

更快的写入速度，GB/s

12.7 8.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Corsair CM4X32GC3200C16K2E 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 41
读取速度，GB/s

13.9 13.5
写入速度，GB/s

8.6 12.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2395 3114

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Crucial Technology CT16G4DFD824A.C16FDR 16GB

Crucial Technology CT16G4DFD824A.C16FDR 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB

SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Corsair CMSX4GX4M1A2400C16 4GB

Corsair CMSX4GX4M1A2400C16 4GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Crucial Technology BL8G32C16U4B.M8FE1 8GB

Crucial Technology BL8G32C16U4B.M8FE1 8GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

G Skill Intl F4-2133C15-16GRS 16GB

G Skill Intl F4-2133C15-16GRS 16GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Team Group Inc. TEANGROUP-UD4-2400 8GB

Team Group Inc. TEANGROUP-UD4-2400 8GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Mushkin MRA4S300GJJM16G 16GB

Mushkin MRA4S300GJJM16G 16GB

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Samsung M471A1K43EB1-CWE 8GB

Samsung M471A1K43EB1-CWE 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 16ATF1G64AZ-2G1A2 8GB

Micron Technology 16ATF1G64AZ-2G1A2 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

G Skill Intl F4-3600C17-4GTZ 4GB

G Skill Intl F4-3600C17-4GTZ 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

Corsair CMWX8GD3200C16W2E 8GB

Corsair CMWX8GD3200C16W2E 8GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Kingston 9905701-141.A00G 16GB

Kingston 9905701-141.A00G 16GB

Samsung M323R2GA3BB0-CQKOD 16GB

Samsung M323R2GA3BB0-CQKOD 16GB

Kingston 99U5584-010.A00LF 4GB

Kingston 99U5584-010.A00LF 4GB

G Skill Intl F4-4400C18-8GTRS 8GB

G Skill Intl F4-4400C18-8GTRS 8GB