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Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CMW64GX4M8C3000C15 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Corsair CMW64GX4M8C3000C15 8GB

总分
star star star star star
Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分
star star star star star
Corsair CMW64GX4M8C3000C15 8GB

Corsair CMW64GX4M8C3000C15 8GB

差异 规格 评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB 需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB
报告一个错误
Corsair CMW64GX4M8C3000C15 8GB 需要考虑的原因
Corsair CMW64GX4M8C3000C15 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 37
    左右 -42% 更低的延时
  • 更快的读取速度，GB/s
    15.2 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.5 left arrow 8.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CMW64GX4M8C3000C15 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 26
  • 读取速度，GB/s
    13.9 left arrow 15.2
  • 写入速度，GB/s
    8.6 left arrow 15.5
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2395 left arrow 3295

Nanya Technology M2F8G64CB8HC9N-DI 8GB RAM的比较

SK Hynix HMT41GR7AFR4C-PB 8GB
Kingston 99P5474-050.A00LF 4GB

Corsair CMW64GX4M8C3000C15 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905458-017.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung DDR3 8GB 1600MHz 8GB
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Crucial Technology CT8G4SFS824A.M8FE 8GB
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内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CMW64GX4M8C3000C15 8GB
Corsair CMW64GX4M8C3000C15 8GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Micron Technology 8ATF1G64HZ-2G1A1 8GB
Micron Technology 8ATF1G64HZ-2G1A1 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT16G4SFS832A.M8FE 16GB
Crucial Technology CT16G4SFS832A.M8FE 16GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Avant Technology W6451U67J7240NB 4GB
Avant Technology W6451U67J7240NB 4GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
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Corsair CMK4GX4M1A2400C16 4GB
Corsair CMK4GX4M1A2400C16 4GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
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Maxsun MSD48G26Q3 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
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G Skill Intl F4-2666C19-16GRS 16GB
内存RAM
Corsair CMX4GX3M1A1333C9 4GB
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Corsair CMD16GX4M2B3733C17 8GB
Corsair CMD16GX4M2B3733C17 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Kingston KHX3333C16D4/8GX 8GB
Kingston KHX3333C16D4/8GX 8GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
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SK Hynix HMA82GR7MFR4N-UH 16GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Kingston KHX3200C20S4/16G 16GB
Kingston KHX3200C20S4/16G 16GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Samsung M393A1G43DB0-CPB 8GB
Samsung M393A1G43DB0-CPB 8GB
内存RAM