Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Crucial Technology BL16G32C16U4R.M16FE1 16GB

总分

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分

Crucial Technology BL16G32C16U4R.M16FE1 16GB

Crucial Technology BL16G32C16U4R.M16FE1 16GB

差异规格评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB

需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 39

左右 5% 更低的延时

Crucial Technology BL16G32C16U4R.M16FE1 16GB

需要考虑的原因
Crucial Technology BL16G32C16U4R.M16FE1 16GB

报告一个错误

更快的读取速度，GB/s

19.5 13.9

测试中的平均数值
更快的写入速度，GB/s

14.9 8.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Crucial Technology BL16G32C16U4R.M16FE1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 39
读取速度，GB/s

13.9 19.5
写入速度，GB/s

8.6 14.9
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2395 3825

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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AMD R534G1601U1S-UO 4GB

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Kingston K1CXP8-MIE 16GB

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Samsung M393B1G70BH0-CK0 8GB

Gloway International Co. Ltd. YCT4S2666D19081C 8GB

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SK Hynix HMT325S6BFR8C-H9 2GB

Corsair CMD16GX4M2A2666C15 8GB

Corsair CMD16GX4M2A2666C15 8GB