Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Crucial Technology BL16G32C16U4WL.M16FE 16GB

总分

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分

Crucial Technology BL16G32C16U4WL.M16FE 16GB

Crucial Technology BL16G32C16U4WL.M16FE 16GB

差异规格评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB

需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB

报告一个错误

Crucial Technology BL16G32C16U4WL.M16FE 16GB

需要考虑的原因
Crucial Technology BL16G32C16U4WL.M16FE 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 37

左右 -28% 更低的延时
更快的读取速度，GB/s

20.6 13.9

测试中的平均数值
更快的写入速度，GB/s

17.5 8.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Crucial Technology BL16G32C16U4WL.M16FE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 29
读取速度，GB/s

13.9 20.6
写入速度，GB/s

8.6 17.5
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2395 3936

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CM3X8GA2400C11Y2R 8GB

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Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

Gold Key Technology Co Ltd GKE800UD102408-2666 8GB

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Samsung M3 78T2863QZS-CF7 1GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Kingston 9965640-015.A00G 32GB