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Nanya Technology M2F8G64CB8HC9N-DI 8GB
Crucial Technology BLS16G4D240FSB.16FAD 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Crucial Technology BLS16G4D240FSB.16FAD 16GB

总分
star star star star star
Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分
star star star star star
Crucial Technology BLS16G4D240FSB.16FAD 16GB

Crucial Technology BLS16G4D240FSB.16FAD 16GB

差异 规格 评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB 需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB
报告一个错误
Crucial Technology BLS16G4D240FSB.16FAD 16GB 需要考虑的原因
Crucial Technology BLS16G4D240FSB.16FAD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 37
    左右 -23% 更低的延时
  • 更快的读取速度，GB/s
    17.4 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.9 left arrow 8.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Crucial Technology BLS16G4D240FSB.16FAD 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 30
  • 读取速度，GB/s
    13.9 left arrow 17.4
  • 写入速度，GB/s
    8.6 left arrow 12.9
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2395 left arrow 3310

Nanya Technology M2F8G64CB8HC9N-DI 8GB RAM的比较

SK Hynix HMT41GR7AFR4C-PB 8GB
Kingston 99P5474-050.A00LF 4GB

Crucial Technology BLS16G4D240FSB.16FAD 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT16G4DFRA266.C16FP 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Crucial Technology BLS16G4D240FSB.16FAD 16GB
Crucial Technology BLS16G4D240FSB.16FAD 16GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
Essencore Limited KD4AGSA8A-32N2200 16GB
Essencore Limited KD4AGSA8A-32N2200 16GB
内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Apacer Technology 78.CAGSZ.4070B 8GB
Apacer Technology 78.CAGSZ.4070B 8GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Ramaxel Technology RMUA5120MB86H9F2400 4GB
Ramaxel Technology RMUA5120MB86H9F2400 4GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Kingston KMKYF9-HYA 8GB
Kingston KMKYF9-HYA 8GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Heoriady HX2666CX15D4/4G 4GB
Heoriady HX2666CX15D4/4G 4GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
Gloway International (HK) STK4U2133D15081C 8GB
Gloway International (HK) STK4U2133D15081C 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Essencore Limited IMA41GU6MFR8N-CF0 8GB
Essencore Limited IMA41GU6MFR8N-CF0 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-3200C16-16GTZ 16GB
G Skill Intl F4-3200C16-16GTZ 16GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Kingston XCCT36-MIE 16GB
Kingston XCCT36-MIE 16GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Team Group Inc. TEAMGROUP-UD4-3600 8GB
Team Group Inc. TEAMGROUP-UD4-3600 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Apacer Technology 78.B1GS6.AUC0B 4GB
Apacer Technology 78.B1GS6.AUC0B 4GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
SK Hynix HMA81GS6DJR8N-VK 8GB
SK Hynix HMA81GS6DJR8N-VK 8GB
内存RAM