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Nanya Technology M2F8G64CB8HC9N-DI 8GB
Crucial Technology BLS4G4D26BFSE.8FB 4GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Crucial Technology BLS4G4D26BFSE.8FB 4GB

总分
star star star star star
Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分
star star star star star
Crucial Technology BLS4G4D26BFSE.8FB 4GB

Crucial Technology BLS4G4D26BFSE.8FB 4GB

差异 规格 评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB 需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB
报告一个错误
Crucial Technology BLS4G4D26BFSE.8FB 4GB 需要考虑的原因
Crucial Technology BLS4G4D26BFSE.8FB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 37
    左右 -68% 更低的延时
  • 更快的读取速度，GB/s
    15.7 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.4 left arrow 8.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Crucial Technology BLS4G4D26BFSE.8FB 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 22
  • 读取速度，GB/s
    13.9 left arrow 15.7
  • 写入速度，GB/s
    8.6 left arrow 12.4
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2395 left arrow 3174

Nanya Technology M2F8G64CB8HC9N-DI 8GB RAM的比较

SK Hynix HMT41GR7AFR4C-PB 8GB
Kingston 99P5474-050.A00LF 4GB

Crucial Technology BLS4G4D26BFSE.8FB 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
G Skill Intl F5-6400J3239G16G 16GB
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内存RAM
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Kingston 9905403-156.A00LF 2GB
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G Skill Intl F4-3600C16-8GTRG 8GB
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ASint Technology SSA302G08-EGN1C 4GB
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Samsung M378B1G73QH0-CK0 8GB
Transcend Information JM2666HLE-16G 16GB
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