Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Crucial Technology C 8GB

总分

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分

Crucial Technology C 8GB

Crucial Technology C 8GB

差异规格评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB

需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB

报告一个错误

更快的读取速度，GB/s

13.9 13.2

测试中的平均数值
更快的写入速度，GB/s

8.6 6.5

测试中的平均数值

Crucial Technology C 8GB

需要考虑的原因
Crucial Technology C 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 37

左右 -19% 更低的延时
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Crucial Technology C 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 31
读取速度，GB/s

13.9 13.2
写入速度，GB/s

8.6 6.5
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2395 1983

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Kingston 9905403-444.A00LF 4GB

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Crucial Technology CT8G4DFS824A.M8FE 8GB

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Samsung M3 93T5750CZA-CE6 2GB

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G Skill Intl F4-2666C15-16GVK 16GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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Micron Technology 18ASF2G72PZ-2G3B1 16GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Memphis Electronic D4SO1G724GI-A58SD 8GB