Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Essencore Limited IM4AGS88N26-GIIHA0 16GB

总分

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分

Essencore Limited IM4AGS88N26-GIIHA0 16GB

Essencore Limited IM4AGS88N26-GIIHA0 16GB

差异规格评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB

需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB

报告一个错误

更快的写入速度，GB/s

8.6 8.1

测试中的平均数值

Essencore Limited IM4AGS88N26-GIIHA0 16GB

需要考虑的原因
Essencore Limited IM4AGS88N26-GIIHA0 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 37

左右 -32% 更低的延时
更快的读取速度，GB/s

14.9 13.9

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Essencore Limited IM4AGS88N26-GIIHA0 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 28
读取速度，GB/s

13.9 14.9
写入速度，GB/s

8.6 8.1
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2395 2263

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-4400C17-16GVK 16GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Essencore Limited IM4AGS88N26-GIIHA0 16GB

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Corsair CMSX16GX4M2A3000C18 8GB

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Apacer Technology 78.A1GC6.9H10C 2GB

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Corsair CMW16GX4M2K4000C19 8GB

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Samsung M471B5273CH0-CH9 4GB

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AMD AE34G2139U2 4GB

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SK Hynix HMA851U6CJR6N-UH 4GB

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Kingston KHX1600C9S3L/4G 4GB

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Kingston 9905711-017.A00G 4GB

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Kingston 99U5474-023.A00LF 4GB

Kingston 99U5474-023.A00LF 4GB

Corsair CMW128GX4M8C3200C16 16GB

Corsair CMW128GX4M8C3200C16 16GB

AMD R5S38G1601U2S 8GB

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Tanbassh 8G 2666MHZ 8GB

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Kingston 9965525-018.A00LF 4GB

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Samsung M393A1G43DB1-CRC 8GB

Samsung M393A1G43DB1-CRC 8GB